cul

英 [ˈkʌl]

美 [ˈkʌl]

网络  加拿大; 库利亚坎; 美国; 文化

英英释义

noun

• a passage with access only at one end
  Synonym:cul de sacdead end

双语例句

• The result showed Cul combined to amino acids at the beginning of the reaction. As the ligand, amino acids also promoted the reaction.
  研究结果表明该反应最开始是催化剂CuI与氨基酸结合，氨基酸在这里担当配体，对反应的进行起到了很好的促进作用。
• A modified Roux en Y anastomosis was developed, which can prevent injury of hepatic portal vein during operation, and cul de sac syndrome after operation.
  提出改良胆肠Roux－en－Y吻合术，它有防止术中门静脉损伤及术后出现盲端综合征的明显优点。
• The profit main part position of labourer in an enterprise should be established, and the masters 'working system should be carried cul.
  应确立劳动者在企业中的利益主体地位，实行主人劳动制。
• From the viewpoint of national cul-ture, cultural colonial activities on the network challenge national cultural identity, unbal-anced development of cultural enterprises threatens the protection of national culture and network information pollution corrodes healthy national culture.
  从民族文化的角度来看，网上的文化殖民活动使民族文化身份受到挑战.文化产业发展的不平衡使民族文化的保护受到威胁，网上的信息污染使民族文化的健康受到侵蚀；
• Comparison of the expression and activity of phosphatidylethanolamine N-methyltransferase 2 between primary cul-tured hepatocytes and hepatoma cells in rats
  肝细胞与肝癌细胞中磷脂酰乙醇胺N-甲基转移酶2表达及活性的比较
• The SDS-PAGE electrophoresis showed that the cleavage yield was dependent on the concentration of CuL ( H2O) 2+ and incubation time.
  聚丙烯酰胺凝胶电泳研究显示在中性及60℃条件下，切割效率与[CuL（H2O）]2+的浓度和温育时间密切相关。
• This article analyses her Enlightened Despotism in the aspects of politics, economics, military affairs and cul-ture.
  本文从政治、经济、军事、文化诸方面对其开明专制进行了分析。
• Modern western ethics has long been trapped in a cul de sac of deep crisis.
  现代西方伦理已经走入一个思想绝地，面临着日益深刻的危机。
• Conclusions The clinical features of CUL were similar to ordinary uterine leiomyoma patients, B-ultrasound test can help to diagnosis CUL before operation, and as to CUL patients, we prefer to hysterectomia.
  结论CUL的临床表现与一般子宫肌瘤相似，B超检查对术前诊断有一定帮助，CUL适宜行全子宫切除。
• Results shew that the combined gettering technology not only improves effectively the τ g of N/ N+ silicon epitaxial wafers and reduces evidently the density of surface defects on the epitaxial layers, but also gives no influences on the resistivity distribution cul the silicon wafer profiles.
  结果表明，综合吸除技术不仅能有效地改善W／N＋硅外延片的电性能（τg）和明显地降低外延层上的表面缺陷密度，而且对硅片剖面的电阻率分布也无影响。